Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering

Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering

Ferroelectric HfO2‐based films incorporated in nonvolatile memory devices offer a low‐energy, high‐speed alternative to conventional memory systems. Oxygen vacancies have been rigorously cited in literature to be pivotal in stabilizing the polar noncentrosymmetric phase responsible for ferroelectric...

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Bibliographic Details
Main Authors: Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Maximilian T. Becker, Judith L. MacManus‐Driscoll, Jinseong Heo, Giuliana Di Martino
Format: Article
Language:English
Published: Wiley-VCH 2024-11-01
Series:Small Science
Subjects:
dark‐field spectroscopies
domain wall motions
fatigues
HZO ultrathin ferroelectric random‐access memories
oxygen vacancy migrations
Raman and photoluminescence
Online Access:https://doi.org/10.1002/smsc.202400223
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https://doi.org/10.1002/smsc.202400223

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