Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperatures
Fabricated GaN trench current aperture vertical electron transistors (CAVETs) were characterized across a wide temperature range for the first time, including in situ cryogenic measurements down to 10 K and ex situ thermal shock testing at elevated temperatures of 773 K and 1073 K. The device featur...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-08-01
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| Series: | Frontiers in Electronics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/felec.2025.1613402/full |
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