Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment
Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing disturbances in crystal lattice emerging after ion im...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2024-07-01
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| Series: | Приборы и методы измерений |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/874 |
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