Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment

Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment

Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing disturbances in crystal lattice emerging after ion im...

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Bibliographic Details
Main Authors: U. A. Pilipenko, A. A. Sergeichik, D. V. Shestovski, V. A. Solodukha
Format: Article
Language:English
Published: Belarusian National Technical University 2024-07-01
Series:Приборы и методы измерений
Subjects:
rapid thermal treatment
disrupted layer
silicon wafer
solid phase recrystallization
deformation potential
Online Access:https://pimi.bntu.by/jour/article/view/874
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