A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and a laterally doped pocket for a very low bandgap line-TFET. Numerical...

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Bibliographic Details
Main Authors: Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen
Format: Article
Language:English
Published: Dalat University 2024-09-01
Series:Tạp chí Khoa học Đại học Đà Lạt
Subjects:
Band-to-band tunneling
Channel-buried oxide
Doping pocket
Line tunneling
Low bandgap TFET.
Online Access:https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313
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https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313

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