Studies on Metal-Oxide Semiconductor ZnO as a Hydrogen Gas Sensor
Metal-oxide semiconductor ZnO thin films were prepared on glass slides by spray pyrolysis technique at substrate temperature (410 ± 10) °C. Zn(NO3)26H2O was used as the precursor solution. The films thus prepared are undergone for structural and morphological studies using X-ray diffraction and scan...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_714-720.pdf |
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