Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics
In this work, dense CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] ceramics were prepared by a conventional solid phase method. The effect of Al[Formula: see text]/Ta[Formula: see text] dopants on the dielectric properties of CdCu3Ti4O[Formula: see text] ce...
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World Scientific Publishing
2025-02-01
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| Series: | Journal of Advanced Dielectrics |
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| Online Access: | https://www.worldscientific.com/doi/10.1142/S2010135X24400162 |
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| author | Huan Liu Zhanhui Peng Yulin Chen Bi Chen Di Wu Lingling Wei Pengfei Liang Xiaolian Chao Zupei Yang |
| author_facet | Huan Liu Zhanhui Peng Yulin Chen Bi Chen Di Wu Lingling Wei Pengfei Liang Xiaolian Chao Zupei Yang |
| author_sort | Huan Liu |
| collection | DOAJ |
| description | In this work, dense CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] ceramics were prepared by a conventional solid phase method. The effect of Al[Formula: see text]/Ta[Formula: see text] dopants on the dielectric properties of CdCu3Ti4O[Formula: see text] ceramics was systematically investigated. Upon Al[Formula: see text]/Ta[Formula: see text] co-doping, the dielectric properties of CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] were significantly enhanced. Particularly, the CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] material displays a decent dielectric property, where dielectric constants ([Formula: see text]), loss tangent (tan [Formula: see text]) at a test frequency of 1[Formula: see text]kHz are able to satisfy the application temperature requirement of the Y6R capacitor. Surprisingly, the refined grains resulting from Al[Formula: see text]/Ta[Formula: see text] co-doping lead to heightened resistance at grain boundaries, which is closely associated with enhanced dielectric properties. Meanwhile, the giant dielectric property of the materials can be attributed to the effect of the internal barrier layer capacitance. The obtained results are expected to provide a new idea for obtaining high dielectric constant and low loss tangent in CdCTO-based materials and promote the practical application of such materials. |
| format | Article |
| id | doaj-art-34bedf32d95443ad8aeaa2af4c5a8ecc |
| institution | Kabale University |
| issn | 2010-135X 2010-1368 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | World Scientific Publishing |
| record_format | Article |
| series | Journal of Advanced Dielectrics |
| spelling | doaj-art-34bedf32d95443ad8aeaa2af4c5a8ecc2025-01-06T00:55:10ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682025-02-01150110.1142/S2010135X24400162Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramicsHuan Liu0Zhanhui Peng1Yulin Chen2Bi Chen3Di Wu4Lingling Wei5Pengfei Liang6Xiaolian Chao7Zupei Yang8Key Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaKey Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaKey Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaSchool of Chemistry and Chemical Engineering, Yulin University, Xi’an 719000, Shaanxi, P. R. ChinaKey Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaSchool of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaSchool of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaKey Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaKey Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, Shaanxi, P. R. ChinaIn this work, dense CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] ceramics were prepared by a conventional solid phase method. The effect of Al[Formula: see text]/Ta[Formula: see text] dopants on the dielectric properties of CdCu3Ti4O[Formula: see text] ceramics was systematically investigated. Upon Al[Formula: see text]/Ta[Formula: see text] co-doping, the dielectric properties of CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] were significantly enhanced. Particularly, the CdCu3(Al[Formula: see text]Ta[Formula: see text]Ti[Formula: see text]O[Formula: see text] material displays a decent dielectric property, where dielectric constants ([Formula: see text]), loss tangent (tan [Formula: see text]) at a test frequency of 1[Formula: see text]kHz are able to satisfy the application temperature requirement of the Y6R capacitor. Surprisingly, the refined grains resulting from Al[Formula: see text]/Ta[Formula: see text] co-doping lead to heightened resistance at grain boundaries, which is closely associated with enhanced dielectric properties. Meanwhile, the giant dielectric property of the materials can be attributed to the effect of the internal barrier layer capacitance. The obtained results are expected to provide a new idea for obtaining high dielectric constant and low loss tangent in CdCTO-based materials and promote the practical application of such materials.https://www.worldscientific.com/doi/10.1142/S2010135X24400162CdCu3Ti4Odielectric constantloss tangentIBLC |
| spellingShingle | Huan Liu Zhanhui Peng Yulin Chen Bi Chen Di Wu Lingling Wei Pengfei Liang Xiaolian Chao Zupei Yang Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics Journal of Advanced Dielectrics CdCu3Ti4O dielectric constant loss tangent IBLC |
| title | Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics |
| title_full | Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics |
| title_fullStr | Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics |
| title_full_unstemmed | Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics |
| title_short | Effect of (Al/Ta) co-doped on dielectric properties of CdCu3Ti4O ceramics |
| title_sort | effect of al ta co doped on dielectric properties of cdcu3ti4o ceramics |
| topic | CdCu3Ti4O dielectric constant loss tangent IBLC |
| url | https://www.worldscientific.com/doi/10.1142/S2010135X24400162 |
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