Effect of Ionizing Radiation on the Properties of Porous Silicon Nanostructures

The influence of ionizing radiation from 226Ra source on the electrical and photoluminescent properties of porous silicon nanostructures was investigated. After the radiation exposure, AC resistance of experimental samples decreased and luminescence band was changed. Temperature dependencies of elec...

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Bibliographic Details
Main Authors: I.B. Olenych, L.S. Monastyrskii, O.S. Dzendzelyuk
Format: Article
Language:English
Published: Sumy State University 2015-12-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04063.pdf
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