Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/18/9/2331 |
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| Summary: | The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO-TFTs fabricated with varying MXene concentrations. As the MXene concentration increases, both the sheet resistance and porosity of the electrodes decrease. VC-IGZO-TFTs based on a 3.0 mg/mL MXene concentration exhibit optimal electrical performance, with a threshold voltage (V<sub>th</sub>) of 0.16 V, a subthreshold swing (<i>SS</i>) of 0.20 V/decade, and an on/off current ratio (I<sub>on</sub>/I<sub>off</sub>) of 4.90 × 10<sup>5</sup>. Meanwhile, the VC-IGZO-TFTs exhibit excellent electrical reliability and mechanical stability. This work provides a way to analyze the influence of sheet resistance and porosity on the performance of VC-IGZO-TFTs, offering a viable approach for enhancing device efficiency through porous MXene electrode engineering. |
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| ISSN: | 1996-1073 |