Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode
The surface morphology of porous source electrodes plays a significant role in the performance of vertical channel indium–gallium–zinc oxide thin-film transistors (VC-IGZO-TFTs). This study systematically investigates the properties of porous MXene-based source electrodes and their impact on VC-IGZO...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/18/9/2331 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|