PREPARATION AND RESEARCH OF HETEROSTRUCTURES GaP / Si BY PULSED LASER DEPOSITION

PREPARATION AND RESEARCH OF HETEROSTRUCTURES GaP / Si BY PULSED LASER DEPOSITION

Pulsed laser deposition method was heterostructure GaP / Si. The methods of reducing the magnitude of the mechanical stresses in the resulting film, Raman scattering found that using the method of pulsed laser deposition at 300 °C for heterostructure GaP / Si is possible to reduce the value of the m...

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Bibliographic Details
Main Authors: Oleg Devitsky, Igor Sysoev, Vitaliy Batishchev, Viktor Vasiliev, Ivan Kasyanov
Format: Article
Language:Russian
Published: North Caucasus Federal University 2022-05-01
Series:Вестник Северо-Кавказского федерального университета
Subjects:
солнечный элемент
гетероструктуры а<sup>3</sup>в<sup>5</sup> / si
импульсное лазерное напыление
широкозонное окно
solar cell
a<sup>3</sup>b<sup>5</sup> / si heterostructures
pulsed laser deposition
wide-screen
Online Access:https://vestnikskfu.elpub.ru/jour/article/view/2187
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Summary:Pulsed laser deposition method was heterostructure GaP / Si. The methods of reducing the magnitude of the mechanical stresses in the resulting film, Raman scattering found that using the method of pulsed laser deposition at 300 °C for heterostructure GaP / Si is possible to reduce the value of the mechanical stresses. Installed depth dependence of occurrence p-n transition in the heterostructure GaP / Si at different temperatures of the annealing time and also obtaining optimum parameters based heterostructure solar cell GaP / Si. Investigated the use of instrumentation GaP/Si heterostructures as a silicon solar cell c wide-window GaP. It is shown that the maximum open circuit voltage obtained solar cell reaches 900 mV at a value of the external quantum efficiency of about 74,5 %.
ISSN:2307-907X

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