Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability
The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub&g...
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2024-12-01
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author | Li Wu Feifei Han Kaiyuan Chen Jianming Deng Laijun Liu Biaolin Peng |
author_facet | Li Wu Feifei Han Kaiyuan Chen Jianming Deng Laijun Liu Biaolin Peng |
author_sort | Li Wu |
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description | The advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> (PZT-25BFO) thin film. Excitingly, PZT-25BFO thin film exhibits an exceptional capacitive energy storage density (<i>W<sub>rec</sub></i> = 24.61–39.76 J/cm<sup>3</sup>) and a high efficiency (<i>η</i> = 53.78–72.74%). Furthermore, the dielectric energy storage density and efficiency enhance simultaneously with increasing thickness of the thin film. However, the loss factor shows the opposite trend. Specifically, the 12-layer PZT-25BFO thin film demonstrates the optimal properties, boasting a significant energy storage density (15.73 J/cm<sup>3</sup>), a high efficiency (77.65%), and remarkable thermal stability (±0.55% variation) from 303 K to 383 K at 1000 kV/cm. This excellent thermal stability can be attributed to the residual stress resulting from a phase transition from the rhombohedral to tetragonal phase. The result offers valuable guidance for the development of ferroelectric thin films in high-power capacitive energy storage applications. |
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institution | Kabale University |
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language | English |
publishDate | 2024-12-01 |
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spelling | doaj-art-32cd6096810b4a5da8884c336535be262025-01-10T13:18:34ZengMDPI AGMolecules1420-30492024-12-01301810.3390/molecules30010008Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal StabilityLi Wu0Feifei Han1Kaiyuan Chen2Jianming Deng3Laijun Liu4Biaolin Peng5Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, ChinaGuangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Environmental Engineering, Hezhou University, Hezhou 542899, ChinaGuangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Environmental Engineering, Hezhou University, Hezhou 542899, ChinaGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, ChinaGuangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, Guilin 541004, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, ChinaThe advancement of miniaturizing electronic information technology draws growing interest in dielectric capacitors due to their high-power density and rapid charge/discharge capabilities. The sol-gel method was utilized to fabricate the 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> (PZT-25BFO) thin film. Excitingly, PZT-25BFO thin film exhibits an exceptional capacitive energy storage density (<i>W<sub>rec</sub></i> = 24.61–39.76 J/cm<sup>3</sup>) and a high efficiency (<i>η</i> = 53.78–72.74%). Furthermore, the dielectric energy storage density and efficiency enhance simultaneously with increasing thickness of the thin film. However, the loss factor shows the opposite trend. Specifically, the 12-layer PZT-25BFO thin film demonstrates the optimal properties, boasting a significant energy storage density (15.73 J/cm<sup>3</sup>), a high efficiency (77.65%), and remarkable thermal stability (±0.55% variation) from 303 K to 383 K at 1000 kV/cm. This excellent thermal stability can be attributed to the residual stress resulting from a phase transition from the rhombohedral to tetragonal phase. The result offers valuable guidance for the development of ferroelectric thin films in high-power capacitive energy storage applications.https://www.mdpi.com/1420-3049/30/1/8PZTBFOenergy storagethermal stability |
spellingShingle | Li Wu Feifei Han Kaiyuan Chen Jianming Deng Laijun Liu Biaolin Peng Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability Molecules PZT BFO energy storage thermal stability |
title | Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability |
title_full | Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability |
title_fullStr | Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability |
title_full_unstemmed | Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability |
title_short | Synthesis of 0.75Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>-0.25BiFeO<sub>3</sub> Thin Film Capacitors with Excellent Efficiency and Thermal Stability |
title_sort | synthesis of 0 75pb zr sub 0 52 sub ti sub 0 48 sub o sub 3 sub 0 25bifeo sub 3 sub thin film capacitors with excellent efficiency and thermal stability |
topic | PZT BFO energy storage thermal stability |
url | https://www.mdpi.com/1420-3049/30/1/8 |
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