The nitrogen-vacancy defect in Si1-xGex

The nitrogen-vacancy defect in Si1-xGex

Abstract Defect processes and energetics in semiconducting alloys is scientifically and technologically important as silicon germanium (Si1 − xGex) is a mainstream nanoelectronic material. It is established that point defects and defect clusters have an increasing role in the physical properties of...

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Bibliographic Details
Main Authors: Stavros-Richard. G. Christopoulos, Navaratnarajah Kuganathan, Efstratia Sgourou, Charalampos Londos, Alexander Chroneos
Format: Article
Language:English
Published: Nature Portfolio 2025-03-01
Series:Scientific Reports
Subjects:
Si1 − xGex
Defects
DFT
Doping
Binding energy
Online Access:https://doi.org/10.1038/s41598-025-94959-2
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https://doi.org/10.1038/s41598-025-94959-2

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