The Transition Processes in Microelectronic Ag-Ge-In/n-GaAs Compositions

Nowadays understanding the structure of the metal-semiconductor contact zone mainly based on research data. This is due to the variety of factors that affect the nature of the processes which occur at contact zone within the semiconductor layer and metallization. Studied microelectronic composition...

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Bibliographic Details
Main Authors: V.S. Dmitriev, L.B. Dmitrieva
Format: Article
Language:English
Published: Sumy State University 2017-04-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2017/2/articles/jnep_V9_02027.pdf
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