Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS

Abstract Using high‐resolution scanning transmission electron microscopy and low‐loss electron energy loss spectroscopy, the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1‐xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure are...

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Main Authors: Nicholas Stephen, Ivan Pinto‐Huguet, Robert Lawrence, Demie Kepaptsoglou, Marc Botifoll, Agnieszka Gocalinska, Enrica Mura, Quentin Ramasse, Emanuele Pelucchi, Jordi Arbiol, Miryam Arredondo
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Materials Interfaces
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Online Access:https://doi.org/10.1002/admi.202400897
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author Nicholas Stephen
Ivan Pinto‐Huguet
Robert Lawrence
Demie Kepaptsoglou
Marc Botifoll
Agnieszka Gocalinska
Enrica Mura
Quentin Ramasse
Emanuele Pelucchi
Jordi Arbiol
Miryam Arredondo
author_facet Nicholas Stephen
Ivan Pinto‐Huguet
Robert Lawrence
Demie Kepaptsoglou
Marc Botifoll
Agnieszka Gocalinska
Enrica Mura
Quentin Ramasse
Emanuele Pelucchi
Jordi Arbiol
Miryam Arredondo
author_sort Nicholas Stephen
collection DOAJ
description Abstract Using high‐resolution scanning transmission electron microscopy and low‐loss electron energy loss spectroscopy, the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1‐xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure are correlated. The findings reveal significant inhomogeneities, particularly near the interfaces, for both the indium and strain distribution, and subtle variations in the Eg across individual QWs. The interplay between strain, composition, and Eg is further explored by density functional theory simulations, indicating that variations in the Eg are predominantly influenced by the indium concentration, with strain playing a minor role. The observed local inhomogeneities suggest that differences between individual QWs may affect the collective emission and performance of the final device. This study highlights the importance of spatially resolved analysis in understanding and optimizing the electronic and optical properties for designing next‐generation metamorphic lasers with multiple QWs as the active region.
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spelling doaj-art-2eda4233ff8b4e168d214d92cb5d4bfe2025-08-20T03:13:36ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-05-011210n/an/a10.1002/admi.202400897Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELSNicholas Stephen0Ivan Pinto‐Huguet1Robert Lawrence2Demie Kepaptsoglou3Marc Botifoll4Agnieszka Gocalinska5Enrica Mura6Quentin Ramasse7Emanuele Pelucchi8Jordi Arbiol9Miryam Arredondo10School of Mathematics and Physics Queen's University Belfast University Road Belfast BT71NN UKCISC and BIST Catalan Institute of Nanoscience and Nanotechnology (ICN2) Campus UAB, Bellaterra Barcelona Catalonia 08193 SpainSchool of Physics Engineering and Technology University of York Heslington York YO10 5DD UKSchool of Physics Engineering and Technology University of York Heslington York YO10 5DD UKCISC and BIST Catalan Institute of Nanoscience and Nanotechnology (ICN2) Campus UAB, Bellaterra Barcelona Catalonia 08193 SpainTyndall National Institute University College Cork “Lee Maltings”, Dyke Parade Cork T12 R5CP IrelandTyndall National Institute University College Cork “Lee Maltings”, Dyke Parade Cork T12 R5CP IrelandSuperSTEM Laboratory SciTech Daresbury Campus Daresbury WA4 4AD UKTyndall National Institute University College Cork “Lee Maltings”, Dyke Parade Cork T12 R5CP IrelandCISC and BIST Catalan Institute of Nanoscience and Nanotechnology (ICN2) Campus UAB, Bellaterra Barcelona Catalonia 08193 SpainSchool of Mathematics and Physics Queen's University Belfast University Road Belfast BT71NN UKAbstract Using high‐resolution scanning transmission electron microscopy and low‐loss electron energy loss spectroscopy, the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1‐xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure are correlated. The findings reveal significant inhomogeneities, particularly near the interfaces, for both the indium and strain distribution, and subtle variations in the Eg across individual QWs. The interplay between strain, composition, and Eg is further explored by density functional theory simulations, indicating that variations in the Eg are predominantly influenced by the indium concentration, with strain playing a minor role. The observed local inhomogeneities suggest that differences between individual QWs may affect the collective emission and performance of the final device. This study highlights the importance of spatially resolved analysis in understanding and optimizing the electronic and optical properties for designing next‐generation metamorphic lasers with multiple QWs as the active region.https://doi.org/10.1002/admi.202400897bandgapelectron energy loss spectroscopyin concentrationInGaAsquantum wellstrain distribution
spellingShingle Nicholas Stephen
Ivan Pinto‐Huguet
Robert Lawrence
Demie Kepaptsoglou
Marc Botifoll
Agnieszka Gocalinska
Enrica Mura
Quentin Ramasse
Emanuele Pelucchi
Jordi Arbiol
Miryam Arredondo
Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
Advanced Materials Interfaces
bandgap
electron energy loss spectroscopy
in concentration
InGaAs
quantum well
strain distribution
title Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
title_full Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
title_fullStr Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
title_full_unstemmed Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
title_short Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS
title_sort evaluating the local bandgap across inxga1 xas multiple quantum wells in a metamorphic laser via low loss eels
topic bandgap
electron energy loss spectroscopy
in concentration
InGaAs
quantum well
strain distribution
url https://doi.org/10.1002/admi.202400897
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