A study on connection mechanism between sintering silver paste for wide bandgap semiconductor and metalized substrate
Using sintering silver paste as an interconnect material for packaging can give full play to the advantages of wide bandgap semiconductors in device applications and improve the reliability of devices. By analyzing the microstructure, mechanical properties and failure modes of the pressureless silve...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2022-11-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2022.06.021 |
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| Summary: | Using sintering silver paste as an interconnect material for packaging can give full play to the advantages of wide bandgap semiconductors in device applications and improve the reliability of devices. By analyzing the microstructure, mechanical properties and failure modes of the pressureless silver paste sintering joints, the microstructure evolution rule of the pressureless silver paste sintering joints at different temperatures was systematically researched. The influence of sintering temperature and substrate metallization type on the connection performance and reliability of sintered silver was obtained. When the sintering temperature was 250 ℃, the shear strength of the pressureless sintering joints at the silver interface reached more than 60 MPa. The shear strength of the pressureless sintering joints at the gold interface was the highest at 200 ℃. Increasing the temperature would cause the atoms at the interface of sintered silver and gold to diffuse too fast, resulting in a decrease in the bonding strength of the interface. Due to the severe oxidation and the cracks at the interface, the shear strength of pressureless sintering joints at the copper interface was much lower than that of joints at silver and gold interfaces. |
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| ISSN: | 1000-128X |