A study on dynamic avalanche test of IGBT module
During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche and the avalanche tolerance of IGBT module. The...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.015 |
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| Summary: | During the turn-off of IGBT modules, dynamic avalanche will occur when a large electric field is generated inside the chip. In this paper, an experimental scheme was designed and verified to analyze the effect of different factors on dynamic avalanche and the avalanche tolerance of IGBT module. The results show that current and inductance have a great effect on the dynamic avalanche of the module. Gate resistance can delay the occurrence of dynamic avalanche inside the module and improve the avalanche resistance of the module. Bus voltage also has a huge effect on the improvement of module avalanche resistance. There is a large difference in avalanche resistance of the module between normal temperature and high temperature. |
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| ISSN: | 1000-128X |