Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer
In this study, we propose a novel p-i-n AlGaN electron-blocking layer for GaN-based LEDs. The aim is to enhance the confinement of electrons and improve the efficiency of hole injection, ultimately resulting in a significant enhancement in LED performance. Detailed simulations and analysis were cond...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2024/8283945 |
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| _version_ | 1849306318213480448 |
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| author | Jun Wang Tian Wang |
| author_facet | Jun Wang Tian Wang |
| author_sort | Jun Wang |
| collection | DOAJ |
| description | In this study, we propose a novel p-i-n AlGaN electron-blocking layer for GaN-based LEDs. The aim is to enhance the confinement of electrons and improve the efficiency of hole injection, ultimately resulting in a significant enhancement in LED performance. Detailed simulations and analysis were conducted to compare the performances of GaN-based LEDs with a conventional EBL and our proposed EBL. It was observed that our newly proposed p-i-n AlGaN EBL significantly outperforms the conventional EBL in terms of output power and efficiency across a wide range of injecting currents. These improvements can be attributed to the strong reverse electrostatic field induced by our proposed p-i-n AlGaN EBL, which not only enhances electron confinement but also improves hole injection efficiency. |
| format | Article |
| id | doaj-art-2e557a5b943443a2812cf3d37bdac561 |
| institution | Kabale University |
| issn | 1687-9392 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Optics |
| spelling | doaj-art-2e557a5b943443a2812cf3d37bdac5612025-08-20T03:55:07ZengWileyInternational Journal of Optics1687-93922024-01-01202410.1155/2024/8283945Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking LayerJun Wang0Tian Wang1School of Integrated CircuitsSchool of Integrated CircuitsIn this study, we propose a novel p-i-n AlGaN electron-blocking layer for GaN-based LEDs. The aim is to enhance the confinement of electrons and improve the efficiency of hole injection, ultimately resulting in a significant enhancement in LED performance. Detailed simulations and analysis were conducted to compare the performances of GaN-based LEDs with a conventional EBL and our proposed EBL. It was observed that our newly proposed p-i-n AlGaN EBL significantly outperforms the conventional EBL in terms of output power and efficiency across a wide range of injecting currents. These improvements can be attributed to the strong reverse electrostatic field induced by our proposed p-i-n AlGaN EBL, which not only enhances electron confinement but also improves hole injection efficiency.http://dx.doi.org/10.1155/2024/8283945 |
| spellingShingle | Jun Wang Tian Wang Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer International Journal of Optics |
| title | Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer |
| title_full | Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer |
| title_fullStr | Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer |
| title_full_unstemmed | Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer |
| title_short | Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer |
| title_sort | numerical investigation on the performance enhancement of ingan gan light emitting diodes with a novel p i n electron blocking layer |
| url | http://dx.doi.org/10.1155/2024/8283945 |
| work_keys_str_mv | AT junwang numericalinvestigationontheperformanceenhancementofinganganlightemittingdiodeswithanovelpinelectronblockinglayer AT tianwang numericalinvestigationontheperformanceenhancementofinganganlightemittingdiodeswithanovelpinelectronblockinglayer |