Numerical Investigation on the Performance Enhancement of InGaN/GaN Light-Emitting Diodes with a Novel p-i-n Electron-Blocking Layer
In this study, we propose a novel p-i-n AlGaN electron-blocking layer for GaN-based LEDs. The aim is to enhance the confinement of electrons and improve the efficiency of hole injection, ultimately resulting in a significant enhancement in LED performance. Detailed simulations and analysis were cond...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-01-01
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| Series: | International Journal of Optics |
| Online Access: | http://dx.doi.org/10.1155/2024/8283945 |
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