Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to the extremity of the channel near the drain....
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.137 |
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| Summary: | We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to the
extremity of the channel near the drain. The gaussian Parameters (standard deviation
and maximum) vary according to the stress. The stress generated defects leads to the
degradation of the threshold voltage. The analysis of the threshold voltage evolution
with stress time allows us to handle informations on the device performances degradation.
The mathematic expression is simple so that the present model is suitable for
circuit simulator. |
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| ISSN: | 0882-7516 1563-5031 |