Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to the extremity of the channel near the drain....
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.137 |
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