Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics

Abstract Advanced filamentary devices are crucial for developing low‐power devices to implement high‐speed logic and neuromorphic devices. Among these, HfO2‐based filamentary devices have attracted attention as viable options due to their threshold‐switching characteristics and compatibility with co...

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Bibliographic Details
Main Authors: Daeyoung Chu, Donghwan Han, Sanghyun Kang, Gwon Kim, Yejoo Choi, Eungyo Jang, Changhwan Shin
Format: Article
Language:English
Published: Wiley-VCH 2024-11-01
Series:Advanced Electronic Materials
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Online Access:https://doi.org/10.1002/aelm.202400140
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