Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications
The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied. Nanowire width has been reduced to have a proper control on the device characteristics...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-12-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04063.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849700110064156672 |
|---|---|
| author | Neel Chatterjee Sujata Pandey |
| author_facet | Neel Chatterjee Sujata Pandey |
| author_sort | Neel Chatterjee |
| collection | DOAJ |
| description | The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied. Nanowire width has been reduced to have a proper control on the device characteristics at reduced gate length. A high value of drain current is obtained at gate length of 10 nm and nanowire radius equal to 10 nm, is obtained. Also high voltage operation of the device upto 40 volts has been shown. A flatter transconductance curve is obtained which shows the linearity of the device. The results obtained are comparable with the experimental and simulated data reported in literature |
| format | Article |
| id | doaj-art-2dbed71fdf014e28b57fa56124422b43 |
| institution | DOAJ |
| issn | 2077-6772 |
| language | English |
| publishDate | 2016-12-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-2dbed71fdf014e28b57fa56124422b432025-08-20T03:18:23ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722016-12-018404063-104063-610.21272/jnep.8(4(2)).04063Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage ApplicationsNeel Chatterjee0Sujata Pandey1Amity University Uttar Pradesh, Noida-201313, IndiaAmity University Uttar Pradesh, Noida-201313, IndiaThe paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied. Nanowire width has been reduced to have a proper control on the device characteristics at reduced gate length. A high value of drain current is obtained at gate length of 10 nm and nanowire radius equal to 10 nm, is obtained. Also high voltage operation of the device upto 40 volts has been shown. A flatter transconductance curve is obtained which shows the linearity of the device. The results obtained are comparable with the experimental and simulated data reported in literaturehttp://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04063.pdfQuantum mechanicalNanowireHigh k gate dielectri |
| spellingShingle | Neel Chatterjee Sujata Pandey Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications Журнал нано- та електронної фізики Quantum mechanical Nanowire High k gate dielectri |
| title | Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications |
| title_full | Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications |
| title_fullStr | Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications |
| title_full_unstemmed | Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications |
| title_short | Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications |
| title_sort | quantum mechanical analysis of gan nanowire transistor for high voltage applications |
| topic | Quantum mechanical Nanowire High k gate dielectri |
| url | http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04063.pdf |
| work_keys_str_mv | AT neelchatterjee quantummechanicalanalysisofgannanowiretransistorforhighvoltageapplications AT sujatapandey quantummechanicalanalysisofgannanowiretransistorforhighvoltageapplications |