Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications
The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied. Nanowire width has been reduced to have a proper control on the device characteristics...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-12-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/4/articles/jnep_2016_V8_04063.pdf |
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