Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate

Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate

This paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide bandgap beta oxide gallium substrate (UWBG-β-Ga2O3) using the two-dimensional device simulator Silvaco-Atlas. The study investiga...

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Bibliographic Details
Main Authors: Noual Amina, Touati Zine-eddine, Messai Zitouni, Saidani Okba, Abderrahim Yousfi
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
HfO2−MOSHEMT
AlInGaN quaternary barrier
β-Ga2O3 substrate
2DEG
Silvaco
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000033
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