Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering

Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering

Abstract The piezoelectric and ferroelectric applications of heterovalent ternary materials are not well explored. Epitaxial MgSiN2 films are grown at 600 °C on (111)Pt//(001)Al2O3 substrates by the reactive sputtering method using metallic Mg and Si under the N2 atmosphere. Detailed X‐ray diffracti...

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Main Authors: Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, Keisuke Ide, Kota Hanzawa, Yoshiomi Hiranaga, Pochun Hsieh, Sankalpa Hazra, Albert Suceava, Akash Saha, Hiroko Yokota, Kei Shigematsu, Masaki Azuma, Venkatraman Gopalan, Hiroshi Uchida, Hidenori Hiramatsu, Hiroshi Funakubo
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Electronic Materials
Subjects:
epitaxial growth
heterovalent
piezoelectrics
ternary nitride
wurtzite structure
Online Access:https://doi.org/10.1002/aelm.202400880
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https://doi.org/10.1002/aelm.202400880

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