Design approach for lateral optimization of GaN CAVETs: A static characteristics study
This paper demonstrates a fabless design approach for the lateral optimization of a GaN current aperture vertical electron transistor (CAVET). To this end, the length of the current blocking layer (CBL) has been scaled to exhibit the influence of current aperture length on the static characteristics...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370424000208 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|