Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase
Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-07-01
|
| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40820-025-01841-x |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849761671407468544 |
|---|---|
| author | Wen Di Zhang Bing Li Wei Wei Wang Xing Ya Wang Yan Cheng An Quan Jiang |
| author_facet | Wen Di Zhang Bing Li Wei Wei Wang Xing Ya Wang Yan Cheng An Quan Jiang |
| author_sort | Wen Di Zhang |
| collection | DOAJ |
| description | Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown. |
| format | Article |
| id | doaj-art-2bd581d9e2464ee1a8dbd81ce7d6fdf3 |
| institution | DOAJ |
| issn | 2311-6706 2150-5551 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano-Micro Letters |
| spelling | doaj-art-2bd581d9e2464ee1a8dbd81ce7d6fdf32025-08-20T03:05:56ZengSpringerOpenNano-Micro Letters2311-67062150-55512025-07-0118111010.1007/s40820-025-01841-xUltrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal PhaseWen Di Zhang0Bing Li1Wei Wei Wang2Xing Ya Wang3Yan Cheng4An Quan Jiang5College of Integrated Circuits and Micro/Nano Electronics Innovation, Fudan UniversityCenter for Transformative Science, ShanghaiTech UniversityShanghai Advanced Research Institute, Chinese Academy of SciencesShanghai Advanced Research Institute, Chinese Academy of SciencesKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal UniversityCollege of Integrated Circuits and Micro/Nano Electronics Innovation, Fudan UniversityHighlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown.https://doi.org/10.1007/s40820-025-01841-xHf0.5Zr0.5O2 thin filmUltrahigh dielectric permittivityNear-edge plasma treatmentOxygen vacancyCharge storage |
| spellingShingle | Wen Di Zhang Bing Li Wei Wei Wang Xing Ya Wang Yan Cheng An Quan Jiang Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase Nano-Micro Letters Hf0.5Zr0.5O2 thin film Ultrahigh dielectric permittivity Near-edge plasma treatment Oxygen vacancy Charge storage |
| title | Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase |
| title_full | Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase |
| title_fullStr | Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase |
| title_full_unstemmed | Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase |
| title_short | Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase |
| title_sort | ultrahigh dielectric permittivity of a micron sized hf0 5zr0 5o2 thin film capacitor after missing of a mixed tetragonal phase |
| topic | Hf0.5Zr0.5O2 thin film Ultrahigh dielectric permittivity Near-edge plasma treatment Oxygen vacancy Charge storage |
| url | https://doi.org/10.1007/s40820-025-01841-x |
| work_keys_str_mv | AT wendizhang ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase AT bingli ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase AT weiweiwang ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase AT xingyawang ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase AT yancheng ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase AT anquanjiang ultrahighdielectricpermittivityofamicronsizedhf05zr05o2thinfilmcapacitoraftermissingofamixedtetragonalphase |