Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density...

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Bibliographic Details
Main Authors: Wen Di Zhang, Bing Li, Wei Wei Wang, Xing Ya Wang, Yan Cheng, An Quan Jiang
Format: Article
Language:English
Published: SpringerOpen 2025-07-01
Series:Nano-Micro Letters
Subjects:
Hf0.5Zr0.5O2 thin film
Ultrahigh dielectric permittivity
Near-edge plasma treatment
Oxygen vacancy
Charge storage
Online Access:https://doi.org/10.1007/s40820-025-01841-x
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https://doi.org/10.1007/s40820-025-01841-x

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