Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase
Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-07-01
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| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40820-025-01841-x |
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| Summary: | Highlights Ferroelectric-to-nonferroelectric transition occurs in a micron-sized Hf0.5Zr0.5O2 thin-film capacitor with the generation of a giant dielectric permittivity. Synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase in the capacitor. The stored charge density of the capacitor is as high as 183 μC cm-2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown. |
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| ISSN: | 2311-6706 2150-5551 |