Study on the Application of Gallium Nitride Transistors in Power Electronics
Wide bandgap semiconductors have emerged as an attractive option for silicon (Si) replacement in the recent years. Among the new materials, gallium nitride (GaN) has been considered as the most promising candidate. This paper presents an overview of the GaN technology in power electronics. The re...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Associação Brasileira de Eletrônica de Potência
2017-09-01
|
| Series: | Eletrônica de Potência |
| Subjects: | |
| Online Access: | https://journal.sobraep.org.br/index.php/rep/article/view/97 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|