Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging

Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging

This work presents dynamic state writing by combining ferroelectric (FE) polarization together with charge injection (CI) on Si-based ferroelectric MOSFETs as a novel approach for non-volatile memory design. FE capacitors are non-destructively integrated in the Back-End-of-Line (BEOL) with Si MOSFET...

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Bibliographic Details
Main Authors: Hannes Dahlberg, Oscar Kaatranen, Karl-Magnus Persson, Arto Rantala, Jacek Flak, Lars-Erik Wernersson
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
BEOL integration
CMOS
FeFET
ferroelectricity
HZO
non-volatile memory
Online Access:https://ieeexplore.ieee.org/document/10835082/
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https://ieeexplore.ieee.org/document/10835082/

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