Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas. The simulation results show that an increase in both the doping concentration and width of the p-GaN region positively affects the ability...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0248147 |
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