Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas. The simulation results show that an increase in both the doping concentration and width of the p-GaN region positively affects the ability...

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Bibliographic Details
Main Authors: Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu
Format: Article
Language:English
Published: AIP Publishing LLC 2025-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0248147
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