New materials based on InP-ZnS system for semiconductor gas analyzers
According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allow...
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Main Authors: | I. A. Kirovskaya, R. V. Ekkert, A. O. Ekkert, E. V. Mironova, I. Yu. Umansky, A. I. Blesman, D. A. Polonyankin, L. V. Kolesnikov, E. N. Kopylova, V. B. Goncharov |
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Format: | Article |
Language: | English |
Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-04-01
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Series: | Омский научный вестник |
Subjects: | |
Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdf |
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