New materials based on InP-ZnS system for semiconductor gas analyzers

According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allow...

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Bibliographic Details
Main Authors: I. A. Kirovskaya, R. V. Ekkert, A. O. Ekkert, E. V. Mironova, I. Yu. Umansky, A. I. Blesman, D. A. Polonyankin, L. V. Kolesnikov, E. N. Kopylova, V. B. Goncharov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2019-04-01
Series:Омский научный вестник
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Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdf
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