New materials based on InP-ZnS system for semiconductor gas analyzers
According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allow...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-04-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdf |
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| author | I. A. Kirovskaya R. V. Ekkert A. O. Ekkert E. V. Mironova I. Yu. Umansky A. I. Blesman D. A. Polonyankin L. V. Kolesnikov E. N. Kopylova V. B. Goncharov |
| author_facet | I. A. Kirovskaya R. V. Ekkert A. O. Ekkert E. V. Mironova I. Yu. Umansky A. I. Blesman D. A. Polonyankin L. V. Kolesnikov E. N. Kopylova V. B. Goncharov |
| author_sort | I. A. Kirovskaya |
| collection | DOAJ |
| description | According to the developed methodology, based on the
isothermal diffusion of the initial binary compounds (InP,
ZnS), their physical and physicochemical properties, solid
solutions of different composition ((InP)x
(ZnS)1-x) have
been obtained. X-ray examinations have been conducted
which allows to certify them as substitution solid solution
with sphalerite structure and acid-base properties studies
(pH isoelectric state — pHISO). The consistent patterns of
changes in the composition of the studied (bulk and surface)
properties, which are of predominantly smooth nature, have
been established. A correlation between theoretical calculated
crystal density and acid sites strength (pHISO) has been
found which served as the basis for recommending a less
labour-consuming way to search for the advanced materials
for semiconductor gas analyzers. |
| format | Article |
| id | doaj-art-2a62cbd6fb6241c180b38cc7ffb4a1f4 |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2019-04-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-2a62cbd6fb6241c180b38cc7ffb4a1f42025-02-03T00:49:17ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412019-04-012 (164)566110.25206/1813-8225-2019-164-56-61New materials based on InP-ZnS system for semiconductor gas analyzersI. A. Kirovskaya0https://orcid.org/0000-0001-5926-8376R. V. Ekkert1https://orcid.org/0000-0003-4358-3421A. O. Ekkert2https://orcid.org/0000-0003-2452-1612E. V. Mironova3I. Yu. Umansky4A. I. Blesman5https://orcid.org/0000-0003-2837-3469D. A. Polonyankin6https://orcid.org/0000-0001-6799-3105L. V. Kolesnikov7E. N. Kopylova8V. B. Goncharov9https://orcid.org/0000-0003-4575-1310Omsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityOmsk State Technical UniversityKemerovo State UniversityOmsk State Technical UniversityFederal Research Center Boreskov Institute of Catalysis Siberian Branch of Russian Academy of ScienceAccording to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X-ray examinations have been conducted which allows to certify them as substitution solid solution with sphalerite structure and acid-base properties studies (pH isoelectric state — pHISO). The consistent patterns of changes in the composition of the studied (bulk and surface) properties, which are of predominantly smooth nature, have been established. A correlation between theoretical calculated crystal density and acid sites strength (pHISO) has been found which served as the basis for recommending a less labour-consuming way to search for the advanced materials for semiconductor gas analyzers.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdfsolid solutionsadvanced materialsnew materials propertiesconsistent patterns and correlationssemiconductor gas analyzers |
| spellingShingle | I. A. Kirovskaya R. V. Ekkert A. O. Ekkert E. V. Mironova I. Yu. Umansky A. I. Blesman D. A. Polonyankin L. V. Kolesnikov E. N. Kopylova V. B. Goncharov New materials based on InP-ZnS system for semiconductor gas analyzers Омский научный вестник solid solutions advanced materials new materials properties consistent patterns and correlations semiconductor gas analyzers |
| title | New materials based on InP-ZnS system for semiconductor gas analyzers |
| title_full | New materials based on InP-ZnS system for semiconductor gas analyzers |
| title_fullStr | New materials based on InP-ZnS system for semiconductor gas analyzers |
| title_full_unstemmed | New materials based on InP-ZnS system for semiconductor gas analyzers |
| title_short | New materials based on InP-ZnS system for semiconductor gas analyzers |
| title_sort | new materials based on inp zns system for semiconductor gas analyzers |
| topic | solid solutions advanced materials new materials properties consistent patterns and correlations semiconductor gas analyzers |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/2%20(164)/56-61%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%A0.%20%D0%92.,%20%D0%AD%D0%BA%D0%BA%D0%B5%D1%80%D1%82%20%D0%90.%20%D0%9E.%20%D0%B8%20%D0%B4%D1%80..pdf |
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