Root cause of read after delay in ferroelectric memories
Accelerated margin loss during read after delay (RAD) is a newly discovered reliability concern in HfO2-based ferroelectric random access memories (FeRAMs), which significantly impacts the lifetime of the memory device. Unlike conventional fatigue effect, this issue is closely linked to the coercive...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-09-01
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| Series: | Chip |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2709472325000139 |
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