IGZO 2T1C DRAM With Low Operation Voltage and High Current Window

IGZO 2T1C DRAM With Low Operation Voltage and High Current Window

In this work, we propose and experimentally demonstrate a novel IGZO 2T1C cell. Novel bit-cell applies read-word-line to the capacitor terminal and utilize the coupling effect of the capacitor to achieve storage node (SN) voltage modulation. By this design, a larger current window can be achieved by...

Full description

Saved in:
Bibliographic Details
Main Authors: Wendong Lu, Kaifei Chen, Menggan Liu, Fuxi Liao, Zijing Wu, Naide Mao, Zihan Li, Xuanming Zhang, Congyan Lu, Jiebin Niu, Bok-Moon Kang, Jing-Hong Shi, Xie-Shuai Wu, Gui-Lei Wang, Zhengyong Zhu, Jiawei Wang, Lingfei Wang, Di Geng, Nianduan Lu, Guanhua Yang, Chao Zhao, Ling Li
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
DRAM
oxide semiconductor
thin-film transistor
In-Ga-Zn-O (IGZO)
low-power
Online Access:https://ieeexplore.ieee.org/document/10981849/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/10981849/

Similar Items