Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes

Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes

Abstract As data storage demands increase, the need for highly dense memory solutions becomes crucial. Magnetic nanostructures offer a pathway to achieve dense memory devices, but standard magnetic memory bit sizes are limited to over 50 nm due to fundamental ferromagnetic properties. In this study,...

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Bibliographic Details
Main Authors: Sheli Muzafe Reiss, Salma Khaldi, Omer Shoseyov, Shira Yochelis, Roie Yerushalmi, Yossi Paltiel
Format: Article
Language:English
Published: Wiley-VCH 2025-07-01
Series:Advanced Electronic Materials
Subjects:
chiral magnetic memory
CISS
molecular tilt angle characterization
nano floret junction
self‐assembly
Online Access:https://doi.org/10.1002/aelm.202400919
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https://doi.org/10.1002/aelm.202400919

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