Reliability Evaluation of High Power Semiconductors
It described the modern reliability engineering based on math and physics. The reliability problems of power semiconductor devices were introduced. Three major acceleration tests were described by means of 4045 IGCT device and related failure rate curves were gained and some calculating instances we...
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.01.001 |
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