Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface
SnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we rea...
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2025-05-01
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| author | Zhujuan Li Qichao Tian Kaili Wang Yuyang Mu Zhenjie Fan Xiaodong Qiu Qinghao Meng Can Wang Yi Zhang |
| author_facet | Zhujuan Li Qichao Tian Kaili Wang Yuyang Mu Zhenjie Fan Xiaodong Qiu Qinghao Meng Can Wang Yi Zhang |
| author_sort | Zhujuan Li |
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| description | SnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we realized the molecular beam epitaxial growth of SnSe<sub>2</sub> films on a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt><mo>×</mo><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn reconstructed Si(111) surface. The analysis of reflection high-energy electron diffraction reveals the in-plane lattice orientation as SnSe<sub>2</sub>[110]//<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn [112]//Si [110]. In addition, the flat morphology of SnSe<sub>2</sub> film was identified by scanning tunneling microscopy (STM), implying the relatively strong adsorption effect of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111) substrate to the SnSe<sub>2</sub> adsorbates. Subsequently, the interfacial charge transfer was observed by X-ray photoemission spectroscopy. Afterwards, the direct characterization of electronic structures was obtained via angle-resolved photoemission spectroscopy. In addition to proving the presence of interfacial charge transfer again, a new relatively flat in-gap band was found in monolayer and few-layer SnSe<sub>2</sub>, which disappeared in multi-layer SnSe<sub>2</sub>. The interface strain-induced partial structural phase transition of thin SnSe<sub>2</sub> films is presumed to be the reason. Our results provide important information on the characterization and effective modulation of electronic structures of SnSe<sub>2</sub> grown on <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111), paving the way for the further study and application of SnSe<sub>2</sub> in 2D electronic devices. |
| format | Article |
| id | doaj-art-2935817ed6254b348e2efc41f54e3d06 |
| institution | Kabale University |
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| spelling | doaj-art-2935817ed6254b348e2efc41f54e3d062025-08-20T03:46:48ZengMDPI AGApplied Sciences2076-34172025-05-011511615010.3390/app15116150Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) SurfaceZhujuan Li0Qichao Tian1Kaili Wang2Yuyang Mu3Zhenjie Fan4Xiaodong Qiu5Qinghao Meng6Can Wang7Yi Zhang8National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, ChinaSnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we realized the molecular beam epitaxial growth of SnSe<sub>2</sub> films on a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt><mo>×</mo><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn reconstructed Si(111) surface. The analysis of reflection high-energy electron diffraction reveals the in-plane lattice orientation as SnSe<sub>2</sub>[110]//<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn [112]//Si [110]. In addition, the flat morphology of SnSe<sub>2</sub> film was identified by scanning tunneling microscopy (STM), implying the relatively strong adsorption effect of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111) substrate to the SnSe<sub>2</sub> adsorbates. Subsequently, the interfacial charge transfer was observed by X-ray photoemission spectroscopy. Afterwards, the direct characterization of electronic structures was obtained via angle-resolved photoemission spectroscopy. In addition to proving the presence of interfacial charge transfer again, a new relatively flat in-gap band was found in monolayer and few-layer SnSe<sub>2</sub>, which disappeared in multi-layer SnSe<sub>2</sub>. The interface strain-induced partial structural phase transition of thin SnSe<sub>2</sub> films is presumed to be the reason. Our results provide important information on the characterization and effective modulation of electronic structures of SnSe<sub>2</sub> grown on <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111), paving the way for the further study and application of SnSe<sub>2</sub> in 2D electronic devices.https://www.mdpi.com/2076-3417/15/11/6150SnSe<sub>2</sub>electronic structuresmolecular beam epitaxystructural phase transitionangle-resolved photoemission spectroscopy |
| spellingShingle | Zhujuan Li Qichao Tian Kaili Wang Yuyang Mu Zhenjie Fan Xiaodong Qiu Qinghao Meng Can Wang Yi Zhang Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface Applied Sciences SnSe<sub>2</sub> electronic structures molecular beam epitaxy structural phase transition angle-resolved photoemission spectroscopy |
| title | Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface |
| title_full | Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface |
| title_fullStr | Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface |
| title_full_unstemmed | Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface |
| title_short | Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface |
| title_sort | electronic structures of molecular beam epitaxially grown snse sub 2 sub thin films on inline formula math display inline semantics mrow msqrt mn mathvariant bold 3 mn msqrt mo mathvariant bold mo msqrt mn mathvariant bold 3 mn msqrt mrow semantics math inline formula sn reconstructed si 111 surface |
| topic | SnSe<sub>2</sub> electronic structures molecular beam epitaxy structural phase transition angle-resolved photoemission spectroscopy |
| url | https://www.mdpi.com/2076-3417/15/11/6150 |
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