Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface

Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface

SnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we rea...

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Bibliographic Details
Main Authors: Zhujuan Li, Qichao Tian, Kaili Wang, Yuyang Mu, Zhenjie Fan, Xiaodong Qiu, Qinghao Meng, Can Wang, Yi Zhang
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Applied Sciences
Subjects:
SnSe<sub>2</sub>
electronic structures
molecular beam epitaxy
structural phase transition
angle-resolved photoemission spectroscopy
Online Access:https://www.mdpi.com/2076-3417/15/11/6150
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