Electronic Structures of Molecular Beam Epitaxially Grown SnSe<sub>2</sub> Thin Films on <inline-formula><math display="inline"><semantics><mrow><msqrt><mn mathvariant="bold">3</mn></msqrt><mo mathvariant="bold">×</mo><msqrt><mn mathvariant="bold">3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn Reconstructed Si(111) Surface
SnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we rea...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/11/6150 |
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| Summary: | SnSe<sub>2</sub>, as a prominent member of the post-transition metal dichalcogenides, exhibits many intriguing physical phenomena and excellent thermoelectric properties, calling for both fundamental study and potential application in two-dimensional (2D) devices. In this article, we realized the molecular beam epitaxial growth of SnSe<sub>2</sub> films on a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt><mo>×</mo><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn reconstructed Si(111) surface. The analysis of reflection high-energy electron diffraction reveals the in-plane lattice orientation as SnSe<sub>2</sub>[110]//<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn [112]//Si [110]. In addition, the flat morphology of SnSe<sub>2</sub> film was identified by scanning tunneling microscopy (STM), implying the relatively strong adsorption effect of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111) substrate to the SnSe<sub>2</sub> adsorbates. Subsequently, the interfacial charge transfer was observed by X-ray photoemission spectroscopy. Afterwards, the direct characterization of electronic structures was obtained via angle-resolved photoemission spectroscopy. In addition to proving the presence of interfacial charge transfer again, a new relatively flat in-gap band was found in monolayer and few-layer SnSe<sub>2</sub>, which disappeared in multi-layer SnSe<sub>2</sub>. The interface strain-induced partial structural phase transition of thin SnSe<sub>2</sub> films is presumed to be the reason. Our results provide important information on the characterization and effective modulation of electronic structures of SnSe<sub>2</sub> grown on <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msqrt><mn>3</mn></msqrt></mrow></semantics></math></inline-formula>-Sn/Si(111), paving the way for the further study and application of SnSe<sub>2</sub> in 2D electronic devices. |
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| ISSN: | 2076-3417 |