Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes
The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N/GaN alloys deposited by metal–organic chemical vapor deposition. The configuration used for the PIN photodiode is based on...
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7945255/ |
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| author | Bandar Alshehri Karim Dogheche Sofiane Belahsene Abderrahim Ramdane Gilles Patriarche Didier Decoster Elhadj Dogheche |
| author_facet | Bandar Alshehri Karim Dogheche Sofiane Belahsene Abderrahim Ramdane Gilles Patriarche Didier Decoster Elhadj Dogheche |
| author_sort | Bandar Alshehri |
| collection | DOAJ |
| description | The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N/GaN alloys deposited by metal–organic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In<sub>0.1</sub>Ga<sub>0.9</sub>N multiple quantum wells. Structural, microstructural, and optical analyses have been carried out using TEM, PL, and absorption measurement. The design of PIN structures varies with an active surface ranging from <inline-formula> <tex-math notation="LaTeX">$10^{4}\,{\rm{to\,10}}^{6}\,{\rm{\mu m}}^{2}$</tex-math></inline-formula>. Static and dynamic characterizations have been performed to qualify the photodiode response. A photocurrent value reaching a maximum of 1.2 mA is reported for a diode of <inline-formula><tex-math notation="LaTeX">${\rm{100\times 100\,\mathrm{\mu} m}}^{2}$</tex-math></inline-formula> area, with an external quantum efficiency of 13%. Using the noise measurement technique, the device reveals a −3-dB cutoff frequency of 300 MHz for the same photodiode. This result clearly shows the potential of III-nitride materials for targeting high-speed optoelectronics. The future prospect is to work toward InGaN-based microphotodiodes in order to achieve optical transmission links in the UV-visible range using the same material system. |
| format | Article |
| id | doaj-art-2906d097a9ab48358751d00bc6a89c3c |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-2906d097a9ab48358751d00bc6a89c3c2025-08-20T03:32:46ZengIEEEIEEE Photonics Journal1943-06552017-01-01941710.1109/JPHOT.2017.27141687945255Dynamic Characterization of III-Nitride-Based High-Speed PhotodiodesBandar Alshehri0Karim Dogheche1Sofiane Belahsene2Abderrahim Ramdane3Gilles Patriarche4Didier Decoster5Elhadj Dogheche6Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, FranceInstitute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, FranceC2N, Centre for Nanoscience and Nanotechnology, CNRS, Route de Nozay, Marcoussis, FranceC2N, Centre for Nanoscience and Nanotechnology, CNRS, Route de Nozay, Marcoussis, FranceC2N, Centre for Nanoscience and Nanotechnology, CNRS, Route de Nozay, Marcoussis, FranceInstitute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, FranceInstitute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, FranceThe objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N/GaN alloys deposited by metal–organic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In<sub>0.1</sub>Ga<sub>0.9</sub>N multiple quantum wells. Structural, microstructural, and optical analyses have been carried out using TEM, PL, and absorption measurement. The design of PIN structures varies with an active surface ranging from <inline-formula> <tex-math notation="LaTeX">$10^{4}\,{\rm{to\,10}}^{6}\,{\rm{\mu m}}^{2}$</tex-math></inline-formula>. Static and dynamic characterizations have been performed to qualify the photodiode response. A photocurrent value reaching a maximum of 1.2 mA is reported for a diode of <inline-formula><tex-math notation="LaTeX">${\rm{100\times 100\,\mathrm{\mu} m}}^{2}$</tex-math></inline-formula> area, with an external quantum efficiency of 13%. Using the noise measurement technique, the device reveals a −3-dB cutoff frequency of 300 MHz for the same photodiode. This result clearly shows the potential of III-nitride materials for targeting high-speed optoelectronics. The future prospect is to work toward InGaN-based microphotodiodes in order to achieve optical transmission links in the UV-visible range using the same material system.https://ieeexplore.ieee.org/document/7945255/PhotodetectorsGaNbandwidthfabrication and characterization |
| spellingShingle | Bandar Alshehri Karim Dogheche Sofiane Belahsene Abderrahim Ramdane Gilles Patriarche Didier Decoster Elhadj Dogheche Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes IEEE Photonics Journal Photodetectors GaN bandwidth fabrication and characterization |
| title | Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes |
| title_full | Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes |
| title_fullStr | Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes |
| title_full_unstemmed | Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes |
| title_short | Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes |
| title_sort | dynamic characterization of iii nitride based high speed photodiodes |
| topic | Photodetectors GaN bandwidth fabrication and characterization |
| url | https://ieeexplore.ieee.org/document/7945255/ |
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