Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N&#x002F;GaN alloys deposited by metal&#x2013;organic chemical vapor deposition. The configuration used for the PIN photodiode is based on...

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Bibliographic Details
Main Authors: Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Abderrahim Ramdane, Gilles Patriarche, Didier Decoster, Elhadj Dogheche
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7945255/
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