Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N&#x002F;GaN alloys deposited by metal&#x2013;organic chemical vapor deposition. The configuration used for the PIN photodiode is based on...

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Bibliographic Details
Main Authors: Bandar Alshehri, Karim Dogheche, Sofiane Belahsene, Abderrahim Ramdane, Gilles Patriarche, Didier Decoster, Elhadj Dogheche
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Photodetectors
GaN
bandwidth
fabrication and characterization
Online Access:https://ieeexplore.ieee.org/document/7945255/
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Summary:The objective of this study is to study, design, and develop a high-speed PIN photodiode based on In<sub>x</sub>Ga <sub>1-x</sub>N&#x002F;GaN alloys deposited by metal&#x2013;organic chemical vapor deposition. The configuration used for the PIN photodiode is based on an absorbing layer composed of In<sub>0.1</sub>Ga<sub>0.9</sub>N multiple quantum wells. Structural, microstructural, and optical analyses have been carried out using TEM, PL, and absorption measurement. The design of PIN structures varies with an active surface ranging from <inline-formula> <tex-math notation="LaTeX">$10^{4}\,{\rm{to\,10}}^{6}\,{\rm{\mu m}}^{2}$</tex-math></inline-formula>. Static and dynamic characterizations have been performed to qualify the photodiode response. A photocurrent value reaching a maximum of 1.2 mA is reported for a diode of <inline-formula><tex-math notation="LaTeX">${\rm{100\times 100\,\mathrm{\mu} m}}^{2}$</tex-math></inline-formula> area, with an external quantum efficiency of 13&#x0025;. Using the noise measurement technique, the device reveals a &#x2212;3-dB cutoff frequency of 300 MHz for the same photodiode. This result clearly shows the potential of III-nitride materials for targeting high-speed optoelectronics. The future prospect is to work toward InGaN-based microphotodiodes in order to achieve optical transmission links in the UV-visible range using the same material system.
ISSN:1943-0655

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