Graphene/h‐BN/ReS2 Heterostructure Operating in Fowler−Nordheim Tunneling Regime for Polarization‐Sensitive Fast Photodetector

Graphene/h‐BN/ReS2 Heterostructure Operating in Fowler−Nordheim Tunneling Regime for Polarization‐Sensitive Fast Photodetector

Abstract On‐chip polarization photodetectors are crucial for advancing optical communication, which is facing the challenges of limited polarization sensitivity and hard on‐chip integration. 2D materials offer unique opportunities for creating high‐performance polarization photodetectors thanks to t...

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Bibliographic Details
Main Authors: Tianyi Zhou, Ming Yang, Jingyao Wang, Xiang Chen, Qingyu Yan, Kenji Watanabe, Taniguchi Takashi, Xue Liu, Yuqing Huang, Weigao Xu, Xinran Wang, Li Gao, Zehua Hu
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
fowler–nordheim tunneling
polarization photodetector
ReS2
Online Access:https://doi.org/10.1002/aelm.202500001
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https://doi.org/10.1002/aelm.202500001

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