Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HEMTs are investigated with the aim of further under...

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Bibliographic Details
Main Authors: François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon, Farid Medjdoub
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Micromachines
Subjects:
AlGaN graded channel
HEMT
transconductance
linearity
simulations
Online Access:https://www.mdpi.com/2072-666X/15/11/1356
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