Performance and Reliability Assessment of Schottky Complementary Multi-FinFET Inverter for Advanced Scaling Nodes
This study investigates the performance of Schottky Complementary Multi-FinFET inverter for advanced technology nodes of 7 nm, 5 nm, and 3 nm using Sentaurus TCAD simulations. The impact of scaling on key device parameters, including threshold voltage (V<inline-formula> <tex-math notation=&...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11045941/ |
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